N的电子结合能

XPS_Database

N1s的电子结合能：

Energy (eV) Element Chemical bonding Ref395.7 N1s N-C 43396 N1s in the passive film and in the bulk 84396 N1s TiN 47396.1 N1s N-C in the TiN coatings before erosion 43396.2 N1s N bonded in AlN, Energy N2+=75,100,300,1000 eV, IAD 139396.3 N1s AlN cristal 175396.3 N1s Cr-N 225396.3 N1s N bonded in AlN, Energy N2+=500 eV, IAD 139396.4 N1s CrN 225396.4 N1s As-received AlN powder 94396.4 N1s AlN/PVB binder burnout in air 94396.4 N1s AlN/PVB binder burnout in nitrogen 94396.4 N1s AlN/PPC binder burnout in air 94396.4 N1s AlN/PPC binder burnout in nitrogen 94396.4 N1s AlN 194396.5 N1s N bonded in AlN, Magnetron, N2,N2+ Ar 139396.6 N1s CrN 150396.6 N1s TiN 197396.6 N1s Cr traité au NaNO3 17396.6 N1s Fe traité au NaNO3 17396.6 N1s N ds Fe13 (nitré) 218396.7 N1s N-Ti 43396.8 N1s N:Ti 31396.8 N1s N:Ti 208396.8 N1s N ds CrN 55396.9 N1s Interface W/TiN 148396.9 N1s Interface TiN/SiO2 (=> TiN) 148396.9 N1s TiN(100) using a photon energy between 440 and 470 eV 180396.9 N1s SS304 traité au NaNO3 17396.9 N1s interface W/TiN après bomb (275 min) 148396.9 N1s interface TiN/SiO2 après bomb (750 min) TiN pur 148396.9 N1s structure W/TiN/Si (Wpur) après bomb (525 min) 148397 N1s Mo traité au NaNO3 17397 N1s 904L traité au NaNO3 17397 N1s AL6X traité au NaNO3 17397 N1s Nads 76397 N1s CrN in alloy 24 after sputtering the passive film 116397 N1s CrN in alloy 33 after sputtering the passive film 116397.1 N1s TiN0.54 O0.17 31397.1 N1s TiN0.63 O0.08 31397.1 N1s TiN0.75 31397.1 N1s TiN0,75 208 1

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N1s N-Ti in the TiN coatings before and after erosion 43N1s TiN0.31 O0.44 31N1s implantation de N dans SS304 225N1s TiN0,31O0,44 208N1s Nads sur l'acier de type 304 N 92N1s N ds 304 ss nitré 218N1s N ds l'acier 304 (nitré) 55N1s TiN0.09 O0.74 31N1s TiN 10N1s WN 111N1s Ni traité au NaNO3 17N1s N ds Cr2N 55N1s related to the NSi3 environment 213N1s Si3N4 150N1s K4Fe(CN)6 111N1s TiN(100) using a photon energy between 440 and 470 eV 180N1s N ds PMDA-ODA T=250°C av 0,16 nm de Cr(faible nrj) 131N1s N ds PMDA-ODA T=250°C av 1,0 nm de Cr(Cr-nitride) 131N1s Cr2N 225N1s large pic après bombardement (5 min) 182N1s nitride 192N1s NaSCN 111N1s nitride 57N1s C-N, pyridinic N in PVCA treated at 573, 873 and 1173K 42N1s C-N, pyridinic N in chars (1223K) 149N1s BN 150N1s BN 111N1s (a,a'-dipyridyl)Mo(CO)4 240N1s phthalocyanine 111N1s NHads 76N1s ds le 304 ss avec N2 implanté 218N1s Graphene N (into the conjug. struct. of graphene mlcl) 71N1s KCN 111N1s (a,a'-dipyridyl)Mo(CO)3(P(OPh)3) 240N1s large pic 182N1s à une profondeur de 0,5 nm 84N1s -N= in a cyclic structure 158N1s (a,a'-dipyridyl)Mo(CO)3(P(O(n-Bu))3) 240N1s BN à 1.6ev FWHM 164N1s NH3 150N1s BuNH2 111N1s pyridine 111N1s amine ou pyridine du Polyimide Kapton 15N1s S2N2 111N1s NaN3 111N1s (o-phenanthroline)Mo(CO)4 2402

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N1s C-N-Cu in [Cu(H2daaen)] 166N1s à une profondeur de 0,5 nm 84N1s free N in interstitial sites, Energy N2+= 75 eV, IAD 139N1s C-N, pyridinic N in initial resin 149N1s N ds NH2 surf PET-APTES(24H) av red par LiAlH4 177N1s plasma: NH3 et N2 188N1s -C=NH 188N1s Plasma: NH3 + N2 / réf: 284,3 eV pour C1s 189N1s PhCN 111N1s AlN (N a été remplacé par O) 175N1s N ds PMDA-ODA T=250°C av 0,16 nm de Cr 131N1s Cr-N 131N1s plasma: O2/Ar/NH3 122N1s tetracyanoquinodimethane 111N1s PhNH2 188N1s R-C=NH; C-NH-C 114N1s plasma: O2/NH3 122N1s AlN (N-O bond) 194N1s PhNH2 111N1s H2N*C6H4NO2 111N1s NO- in 316L before sputtering the passive film 116N1s NO- in 316L after sputtering the passive film 116N1s NO- in alloy 24 before sputtering the passive film 116N1s NO- in alloy 33 before sputtering the passive film 116N1s (N,N,N',N'-tetramethylethylenediamine)Mo(CO)4 240N1s H2NSO2C6N4NO2 111N1s Aromatic N 114N1s Nitrogen in an NH2 state 213N1s C-N, pyrrolidonic N in PVPO treated at 573K 42N1s C-N, pyridinic N in PVPI treated at 573, 873 and 1173K 42N1s N at surface of SS304 225N1s N For N2/Ni(100) 64N1s guanidine HCl 111N1s N-C 104N1s R-NH2 114N1s N at surface 84N1s plasma: Ar/NH3 122N1s CN in H4daaen 166N1s N-O 43N1s N-C-O 177N1s R-CN 114N1s PhNHCSNHPh 111N1s Ni traité à NH3 17N1s SS304 traité à NH3 17N1s phi-NH2 114N1s en surface 843

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N1s NH amide group 171N1s Conjugated N (C=N type, not in graphene molecules) 71N1s Fe traité à NH3 17N1s AL6X 17N1s NH3 sur l'acier de type 304 N 92N1s NH3 57N1s O=C-NH-(C,H) 114N1s -NH2 (-NH) 158N1s C-N in Kapton(TM), polyether imide film 205N1s 3ary amine (red° under X-ray beam) in initial resin 149N1s PhNNPh 111N1s Co(NH3)8Cl3 111N1s Mo treated with NH3 17N1s 317LX treated with à NH3 17N1s phthalocyanine 111N1s adsorption de N2,NH3, NH3 sur SS304 225N1s N2H4ads 76N1s N Ox fretted (5V for 5 min) in blood serum 207N1s N ds Fe13 (adsorbé) 218N1s N-O in the TiN coatings before and after erosion 43N1s C-N, pyridone in chars (1223K) 149N1s Na2N2O2 111N1s ds PE-Ar et PE-N (groupe organique nitrogène) 48N1s C-N, 2ndary prod. of PVPO treated at 573 and 873K 42N1s C-N, pyrrolic N in PVPO treated at 1173K 42N1s N-H ou N-O 192N1s C-N, pyrrolic N in PVCA treated at 573, 873 and 1173K 42N1s N Ox, 316 L alloy fretted (30 min) in blood serum 207N1s Plasma: NH3 + N2 / réf: 284,3 eV pour C1s 189N1s C-N, pyridonic N in PVPI treated at 573, 873 and 1173K 42N1s C-N du Polyimide Kapton 15N1s plasma: NH3 et N2 188N1s groupe aliphatique 188N1s N Ox in 316 L alloy dipped in blood serum 1h 207N1s N Ox"corrosion products" after fretted in blood 207N1s C-N-H in [Eu(H2daaen)] 166N1s C-N, quaternary N in PVPI treated at 1173K 42N1s N ds NH3+ surf PET-APTES(24H) av red par LiAlH4 177N1s N For N2/Ni(100) 64N1s C-N-Cu in [CuEu(daaen)] 166N1s N ds PMDA-ODA 130N1s PE après 5 min d'expo au plasma nitrogène 48N1s N incorp. in the condensed struct. units : chars 1223K 149N1s H3N+CHRCOO- 111N1s NH4NO3 111N1s EtNH3Cl 1114

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N1s NO ( - delta ) ads 76N1s C-N, quaternary N in PVCA treated at 1173K 42N1s Me4NBr 111N1s PE-N après protonation avec H2SO4(0,1M) 48N1s NH4+ in 316L before sputtering the passive film 116N1s NH4+ in 316L after sputtering the passive film 116N1s NH4+ in alloy 24 before sputtering the passive film 116N1s NH4+ in alloy 33 before sputtering the passive film 116N1s NH4+ in alloy 24 after sputtering the passive film 116N1s NH4+ in alloy 33 after sputtering the passive film 116N1s C-N, quaternary N in PVPO treated at 1173K 42N1s ds PE-Ar-PFB 48N1s ds PE-Ar-TFE 48N1s "oxidized N" 158N1s (NH3OH)+Cl- 111N1s ds PE-Ar-PFPH 48N1s NH4Cl 150N1s amino-sulfate -pyrite n°1- 163N1s C-N+ 114N1s p-NH3+C6H4SO3- 111N1s ds PE-Ar 48N1s N-methyl pyridinium in initial resin 149N1s NH4NO3 150N1s NH4+ sur l'acier de type 304 N 92N1s N2H6SO4 111N1s Pyridine-N-oxyde in chars 149N1s chloranil-pyridine 111N1s amino-sulfate -pyrite n°2- 163N1s NH4+ 192N1s Me4NCl 111N1s C-N, pyridine-N-oxyde in PVPI treated at 1173K 42N1s N2 peak, Energy N2+= 75 eV, IAD 139N1s Me3NO 111N1s plasma: NH3 et N2 188N1s Plasma: NH3 + N2 / réf: 284,3 eV pour C1s 189N1s NaN3 111N1s AlN (N a été remplacé par O, Air 100°C) 175N1s N2 peak, Energy N2+= 1000 eV, IAD 139N1s Shake-up satellites (pi-pi*) (entrapped NOx) 149N1s NaNO2 111N1s PE après traitement par pentafluorobenzaldehyde 48N1s C-N, pyridine-N-oxyde in PVPO treated at 873 and 1173K 42N1s NaNO2 150N1s N2 peak, Energy N2+= 100,300 eV, IAD 139N1s N2 peak, Energy N2+= 500 eV, IAD 139N1s Shake-up satellites (pi-pi*) (entrapped NOx) 1495

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N1s AmONO 111N1s Al oxynitride, dans l'air t°>700°C 175N1s NO2 114N1s PhNO2 111N1s MeNO2 111N1s NH4NO3 111N1s NO ( + delta ) ads 76N1s NO3- in 316L after sputtering the passive film 116N1s NO3- in alloy 24 before sputtering the passive film 116N1s NO3- in alloy 33 before sputtering the passive film 116N1s NO3- in alloy after sputtering the passive film 116N1s NO3- in alloy after sputtering the passive film 116N1s NaNO3 150N1s NaNO3 111N1s élément naturel 147 6